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Product Data Sheet
2 - 20 GHz Power Amplifier
TGA8334-SCC
Key Features and Performance
* * * * * * * 2 to 20 GHz Frequency Range 0.4-W Output Power at 1 dB Gain Compression at Midband Positive Gain Slope Across Frequency On-Chip Input DC-Blocking Capacitor 1.8:1 Input SWR at Midband, 1.3:1 Output SWR at Midband 8 dB Gain with +/- 1 dB Flatness 3.1750 x 1.8034 x 0.1524 mm (0.125 x 0.071 x 0.006 in.)
Description
The TriQuint TGA8334-SCC is a GaAs monolithic dual-gate distributed amplifier. Small-signal gain is typically 8 dB with positive gain slope across the band. Input and output return loss is typically greater than 9.7 dB. Five 600um gatewidth FETs provide more than 26 dB output power at 1 dB gain compression at midband. Ground is provided to the circuitry through vias to the backside metallization. The TGA8334-SCC is directly cascadable with other broadband TriQuint GaAs amplifiers, such as the TGA8300-SCC, TGA8622-SCC, and TGA8220-SCC. This general power amplifier is suitable for a variety or wide-band applications such as distributed networks, logging stages and oscillator buffers. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the thermocompression and thermosonic wire bonding processes. The TGA8334-SCC is supplied in chip form and is readily assembled using automated equipment.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8334-SCC
TYPICAL OUTPUT POWER P1dB
TYPICAL SMALL-SIGNAL POWER GAIN
TYPICAL RETURN LOSS
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
2
Product Data Sheet TGA8334-SCC
ABSOLUTE MAXIMUM RATINGS
Positive supply voltage, V+................................................................................................9 V Positive supply current, I+..................................................................................................IDSS Negative supply voltage range, V-....................................................................................... V to 0 V -5 Gain control voltage range, V CTRL....................................................................................... -5 V to 4 V Gain control voltage range w ith respect to positive supply voltage, V CT RL................................... 0 V to -10 V Pow er dissipation, PD, at (or below ) 25oC base-plate temperature *......................................... 7.2 W Input continuous w ave pow er, PIN.................................................................................. 27 dBm Operating Channel temperature, TCH **.............................................................................. 150oC Mounting temperature (30 sec.), TM.................................................................................. 320oC Storage temperature range, TSTG...................................................................................... -65 to 150oC Ratings over operating channel tem perature range, TCH (unless otherw ise noted). Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "RF Characteristics" is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability. * For operation above 25oC base-plate temperature, derate linearly at the rate of 15.2 mW/oC. ** Operating channel temperature directly affects the device MTTF. For maximum life, it is recommended that channel temperature be maintained at the low est possible level. These ratings apply to each individual FET.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8334-SCC
TYPICAL S-PARAMETERS
F re que nc y (GHz) M AG
S 11 ANG() M AG
S 21 ANG() M AG
S 12 ANG() M AG
S 22 ANG()
GAIN (dB)
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 19.0 19.5 20.0
0.62 0.40 0.30 0.24 0.21 0.19 0.16 0.14 0.12 0.09 0.06 0.04 0.05 0.09 0.14 0.18 0.22 0.25 0.27 0.29 0.29 0.27 0.25 0.20 0.16 0.13 0.12 0.14 0.17 0.19 0.22 0.21 0.19 0.14 0.09 0.06 0.06 0.08 0.05
-67 -103 -126 -146 -163 -180 166 151 138 128 125 149 -178 -172 178 165 151 136 122 107 93 81 69 59 57 64 74 80 83 71 56 38 18 -6 -26 -37 -42 -81 -103
2.156 2.092 2.110 2.132 2.156 2.181 2.213 2.241 2.294 2.338 2.374 2.408 2.431 2.459 2.471 2.458 2.444 2.432 2.430 2.451 2.465 2.470 2.492 2.532 2.521 2.471 2.446 2.447 2.457 2.507 2.557 2.572 2.563 2.574 2.562 2.563 2.561 2.501 2.430
154 143 128 113 96 80 63 47 30 12 -6 -24 -42 -61 -79 -98 -117 -135 -153 -172 170 151 132 111 90 70 51 31 10 -11 -34 -57 -80 -104 -129 -154 151 122 94
0.001 0.001 0.002 0.003 0.004 0.005 0.006 0.007 0.008 0.009 0.009 0.009 0.009 0.009 0.008 0.008 0.008 0.009 0.010 0.011 0.012 0.013 0.014 0.014 0.012 0.007 0.004 0.003 0.006 0.007 0.007 0.007 0.005 0.006 0.009 0.012 0.015 0.015 0.015
42 65 81 80 75 66 56 46 32 18 3 -14 -27 -47 -66 -83 -100 -117 -134 -150 -165 176 155 133 107 89 89 133 134 110 80 40 1 -33 -75 -114 179 144 108
0.36 0.35 0.34 0.33 0.31 0.29 0.27 0.24 0.22 0.19 0.17 0.15 0.15 0.15 0.15 0.16 0.16 0.16 0.16 0.14 0.13 0.11 0.08 0.07 0.08 0.09 0.10 0.09 0.08 0.07 0.05 0.07 0.11 0.15 0.18 0.19 0.14 0.06 0.10
-170 171 159 150 140 133 126 120 116 115 115 118 122 124 126 125 123 120 115 109 104 97 98 115 134 133 123 114 108 107 124 150 153 147 137 122 93 102 -175
6.7 6.4 6.5 6.6 6.7 6.8 6.9 7.0 7.2 7.4 7.5 7.6 7.7 7.8 7.9 7.8 7.8 7.7 7.7 7.8 7.8 7.9 7.9 8.1 8.0 7.9 7.8 7.8 7.8 8.0 8.2 8.2 8.2 8.2 8.2 8.2 8.2 8.0 7.7
V D = 8 V, VCTRL = 1 V, I D = 50% IDSS, T A = 25oC, The reference planes for S-parameter data include bond wires as specified in the "Recommended Assembly Diagram." The S-parameters are also available on floppy disk and the world wide web.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8334-SCC
RF CHARACTERISTICS
P AR AM ETER
TES T C ONDITIONS
TYP
UNIT
Gp P 1dB Gp SWR(in)
Sma ll-s ignal pow e r gain Output pow er a t 1-dB gain compre s s ion Gain fla tne s s Input s ta nding w ave ratio
f = 2 to 20 GHz f = 2 to 14 GHz f =14 to 18 GHz f = 2 to 20 GHz f = 2 GHz f = 9 GHz f =18 GHz f = 2 GHz
8 26 25 1 1.6:1 1.7:1 1.1:1 2.0:1 1.4:1 1.5:1 38 41 38
dB dBm dB dBm
SWR(out)
Output s tanding w ave ra tio
f = 9 GHz f =18 GHz f = 2 GHz
IP 3
Output third-orde r inte rce pt point
f = 9 GHz f =18 GHz
V D = 8 V, VCNTR = 1 V, I D = 50% IDSS, T A = 25oC, DC CHARACTERISTICS
P AR AM ETER TES T C ONDITIONS M IN M AX UNIT
IDS S Total zero-gate -voltage drain curre nt a t s a tura tion V DS = 0.5 V to 3.5 V, V GS = 0 V 630 1170 mA
TA = 25OC VDS for IDSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at DC Autoprobe.
THERMAL INFORMATION
R J C The rmal res is ta nce (channel to bac ks ide ) V D = 8 V, ID = 50% IDS S , V CT RL = 1 V 18.7 C/W
P AR AM ETER
TES T C ONDITION
NOM
UNIT
EQUIVALENT SCHEMATIC
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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Product Data Sheet TGA8334-SCC
RECOMMENDED TEST CONFIGURATION
RECOMMENDED ASSEMBLY DIAGRAM
RF connections: Bond using two 1.0-mil diameter, 20 to 25-mil-length gold bond wires at both RF Input and RF Output. DC blocks required at RF Output port. Close placement of external components is essential to stability. Refer to TriQuint's Recommended Assembly Instructions for GaAs Products.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
6
Product Data Sheet TGA8334-SCC
MECHANICAL DRAWING
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test.
TriQuint Semiconductor Texas Phone: (972)994 8465
Fax: (972)994 8504 Web: www.triquint.com
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